Solid-state imaging device
US4223330A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 22, 1979 |
| Grant date | Sep 16, 1980 |
| Priority date | — |
| Expiry date | Jan 22, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/186
Abstract
In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.