Low resistivity ohmic contacts for compound semiconductor devices
US4223336A · kind A · utility
5Cited by
10References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 14, 1978 |
| Grant date | Sep 16, 1980 |
| Priority date | — |
| Expiry date | Mar 14, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
Ohmic contacts having reduced resistivity and enhanced current-carrying capability are fabricated in compound semiconductor devices by substantially saturating the compound semiconductor with two different impurities of the same conductivity type, the different impurities being respectively suitable for occupying the two different types of impurity sites available in the compound semiconductor. The result is a sufficient increase in available carriers that conductivity takes place primarily through field emission tunneling and is enhanced to a degree wholly disproportionate to the increase in the number of available carriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.