Production of thin layers of polycrystalline silicon on a liquid layer containing a reducing agent
US4225367A · kind A · utility
7Cited by
11References
26Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 1978 |
| Grant date | Sep 30, 1980 |
| Priority date | — |
| Expiry date | Nov 6, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thin layers of polycrystalline silicon are formed atop a metal substrate, by reducing a gaseous silicon containing compound with metallic zinc, in liquid state, and in the presence of at least one other metal which is also in liquid state, same being either tin, lead, gold, silver, antimony and/or bismuth. The reaction is conducted under conditions such that the zinc compound product of reduction is also in gaseous state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.