Oxide masking of gallium arsenide
US4226667A · kind A · utility
12Cited by
5References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 31, 1978 |
| Grant date | Oct 7, 1980 |
| Priority date | — |
| Expiry date | Oct 31, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The use of gallium arsenide as an electronic material is increasing in popularity. However, its utility for planar MOS technology is hindered by the fact that its native oxide stabilizes upon heating and becomes etch resistant. I have discovered that it is the vaporization of arsenic containing compounds in the oxide which renders the oxide insoluble. A technique is described wherein an inert capping layer is disposed on a layer of the native oxide prior to heat exposure. This prevents evaporation of arsenic, and both the capping layer and the oxide are capable of subsequent dissolution in a weak acid or base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.