Semiconductor device
US4228444A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 1978 |
| Grant date | Oct 14, 1980 |
| Priority date | — |
| Expiry date | Sep 29, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
On a semiconductor substrate (or layer) of one conductivity type, a semiconductor layer of the opposite conductivity type is formed and a source and a drain region of the same conductivity type as the semiconductor substrate are formed in the semiconductor layer. Junctions are respectively formed between the source and drain regions and the semiconductor layer at such positions where punch-through may easily occur between the source and drain regions and the semiconductor substrate when operating voltages are applied to these regions. A local potential distribution generation electrode, which makes an ohmic contact with the semiconductor layer, is formed between the source and drain regions. By applying voltages to both the local potential distribution generation electrode and a drain electrode at substantially the same time, a potential barrier normally formed in the semiconductor layer is removed, thereby to inject carriers from the source region to the drain region through the semiconductor substrate (or layer).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.