Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching
US4229233A · kind A · utility
8Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1979 |
| Grant date | Oct 21, 1980 |
| Priority date | — |
| Expiry date | Feb 5, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A differential reactive ion etching process significantly reduces the reflectivity of silicon. The process takes place in a reactive ion etching tool, typically a diode-configured system employing ambient gases which react with the silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.