Glow discharge etching process for chromium
US4229247A · kind A · utility
21Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 1978 |
| Grant date | Oct 21, 1980 |
| Priority date | — |
| Expiry date | Dec 26, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chromium is etched in a glow discharge without attack on Al/Cu, Si, SiO.sub.2, and Si.sub.3 N.sub.4 layers by etching in a low pressure ambient atmosphere containing a polychlorinated organic compound such as CCl.sub.4, water, and a material selected from the group consisting of the noble gases and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.