Cadmium mercury telluride sputtering targets
US4231981A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1978 |
| Grant date | Nov 4, 1980 |
| Priority date | — |
| Expiry date | Nov 13, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of a method are disclosed for producing large size cadmium mercury telluride (CMT) sputtering targets of a homogeneous composition. Sputtering targets of CMT having a general formula Cd.sub.x Hg.sub.1-x Te wherein x has values in the range of about 0.14 to 0.60 are prepared by compacting finely divided CMT of a particle size smaller than 150.mu. in a die into a coherent compact having a density of at least 97% theoretical density. CMT with an x value of about 0.14 to about 0.20 preferably is compacted at a die preheat temperature of about 100 to 300.degree. C. and at a compacting pressure of at least about 400 MPa. CMT having an x value of about 0.20 to about 0.60 preferably is compacted at a die preheat temperature of about 300.degree. C. and a compacting pressure of about 160 to 275 MPa. The die may be evacuated to a pressure of less than about 133 Pa absolute prior to compacting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.