Electrical insulator with semiconductive glaze
US4232185A · kind A · utility
4Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1978 |
| Grant date | Nov 4, 1980 |
| Priority date | — |
| Expiry date | Apr 28, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B17/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An insulator with a tin oxide semiconductor glaze coating has a portion at least 100.mu. thick extending from the glaze surface in which the ratio of the maximum to the minimum volume resistivity is not more than 30. It is found that such glazes display marked improvement in resistance to deterioration under unfavorable conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.