Chemically sensitive field effect transistor having electrode connections

US4232326A · kind A · utility

Assignee

• BBC Brown, Boveri & Company Ltd. · CH

Inventors

• Arno Neidig · Plankstadt, DE
• Gerhard Popp · Lampertheim, DE
• Gabriele Gilbers · Lampertheim, DE

Key dates

• Filing date: Jul 26, 1978
• Grant date: Nov 4, 1980
• Expiry date: Jul 26, 1998

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/1306
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A chemically sensitive field effect transistor (FET), particularly an ion-sensitive FET (ISFET), and a method of making the same, wherein a semi-conductor body of a first conductivity type is provided with source and drain diffusion zones spaced apart and extending a predetermined distance into the semiconductor body from the front face thereof. Also formed in the semiconductor body is a pair of connection zones extending from the front face to the rear face of the semiconductor body, and connected to the diffusion zones on the front face by means of conductor paths, the diffusion zones, the conduction paths, and the connection zones formed of a material having a second conductivity and which are of a second conduction type with opposite polarity to the conduction type of the semiconductor body. External connections are made to the diffusion zones through the conductor paths and the connection zones by means of connection lines contacting the connection zones at the rear face of the semiconductor body.