Method for manufacturing a semiconductor element utilizing thermal neutron irradiation and annealing
US4234355A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 4, 1978 |
| Grant date | Nov 18, 1980 |
| Priority date | — |
| Expiry date | Dec 4, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a known process for manufacturing a semiconductor element, a single crystal semiconductor body is subjected to at least one high temperature treatment such as diffusion or epitaxy in order to create a pn junction. A metallization is then applied to the upper surface of the semiconductor to constitute an electrode. Thereafter the element is subjected to an annealing process at intermediate temperatures. In accordance with the invention, a semiconductor body is irradiated following the manufacture of the pn junctions and prior to the metallization. The radiation causes lattice displacements which in turn decrease the lifetime of the minority carriers. The above-mentioned annealing process then also serves partially to heal the lattice displacements caused by the radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.