Growth of single crystal beryllium oxide
US4234376A · kind A · utility
1Cited by
1References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 1, 1979 |
| Grant date | Nov 18, 1980 |
| Priority date | — |
| Expiry date | Oct 1, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for rapid growth of large single crystals of beryllium oxide of a high degree of perfection is provided. The crystals are grown by top seeding in a substantially oxygen-and water vapor-free atmosphere from molten mixtures of BeO and one or more other metal oxides. Critical parameters include seed crystal orientation, rotation and pull rates and induction heating frequency. Resultant crystals are useful as substrates and windows in electronic and laser applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.