Polycrystalline diamond body/silicon nitride substrate composite
US4234661A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 1979 |
| Grant date | Nov 18, 1980 |
| Priority date | — |
| Expiry date | Mar 12, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.