Layer of crystalline silicon having (111) orientation on (111) surface of lithium aluminum
US4235662A · kind A · utility
8Cited by
7References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 28, 1978 |
| Grant date | Nov 25, 1980 |
| Priority date | — |
| Expiry date | Jun 28, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Low strain heteroepitaxy of (111) silicon on (111) lithium aluminum between the reconstructed 7.times.7 surface of (111) silicon and a 6.times.6 array of aluminum atoms on the surface of the (111) lithium aluminum. The 7.times.7 reconstructed (111) silicon surface contains 36 silicon atoms and 13 vacancies for every 49 surface sites. The 36 silicon atoms on an area averaged basis match the 36 aluminum atoms in the 6.times.6 aluminum diamond structure (zero vacancies) present at the (111) surface of lithium aluminum to within about 1%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.