Sputtering system for optimizing quartz deposition uniformity
US4238312A · kind A · utility
6Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 1979 |
| Grant date | Dec 9, 1980 |
| Priority date | — |
| Expiry date | Jul 23, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering system adapted for depositing quartz in uniform thicknesses upon multiple wafers processed in batches including an anode plate having a plurality of wafer locations spaced from the center of the anode, with each wafer location comprising a wafer receiving recess in the anode plate having an angular bottom slope which, in effect, tilts the wafer to an optimum deposition angle with respect to the cathode, depending upon wafer spacing from the center of the anode, to insure uniform deposition across the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.