Method of obtaining polycrystalline silicon
US4238436A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1979 |
| Grant date | Dec 9, 1980 |
| Priority date | — |
| Expiry date | May 10, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Polycrystalline silicon is obtained by providing a silicon wafer having disposed over at least one face thereof a base coating of oxide, nitride or oxynitride composition, forming a substantially pinhole-free and scratch-free layer of carbon on said base coating over at least the face, forming on the face of the carbon layer a layer of polycrystalline silicon, and removing the silicon layer from the protective coating. Any of the carbon layer adhering to the silicon layer is easily removable to provide the silicon layer separate from the substrate. The wafer/coating unit is reusable in the procedure. The wafer/coating/carbon layer unit comprises a workpiece useful in the practice of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.