Multi-spectrum photodiode devices
US4238760A · kind A · utility
84Cited by
7References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 6, 1978 |
| Grant date | Dec 9, 1980 |
| Priority date | — |
| Expiry date | Oct 6, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1825
Abstract
One or more photoelectric device elements are formed beneath the surface of a monolithic semiconductor structure below a surface photoelectric detector device to form a plurality of photoelectric devices having different spectral responses. The surface element is responsive to visible light and the one or more subsurface devices are sensitive to longer wavelength radiation depending upon the depth of the device below the surface of the structure. A two dimensional array of the devices may be formed in a single semiconductor wafer to provide a self-scanning multi-element photosensor array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.