Method for fabricating a semiconductor device by controlled diffusion between adjacent layers
US4239559A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 17, 1979 |
| Grant date | Dec 16, 1980 |
| Priority date | — |
| Expiry date | Apr 17, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is disclosed, which comprises forming a first polycrystalline silicon film containing an impurity such as phosphorus or boron on the surface of a silicon oxide film, forming an impurity-free second polycrystalline silicon film contiguous to the first polycrystalline silicon film, diffusing the impurity contained in the first polycrystalline silicon film into the second polycrystalline silicon film to form an impurity-containing region, and oxidizing the impurity-containing region to electrically separate the first and second polycrystalline silicon films from each other by the resulting oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.