Reducing the switching time of semiconductor devices by neutron irradiation
US4240844A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1978 |
| Grant date | Dec 23, 1980 |
| Priority date | — |
| Expiry date | Dec 22, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/165
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 Mev. to a dosage between 1.times.10.sup.11 and 1.times.10.sup.15 neutrons per square centimeter. The irradiation is preferably to a dosage between 1.times.10.sup.1 and 1.times.10.sup.14 neutrons per square centimeter and preferably has substantial energy greater than 14 Mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50.degree. C. higher than the highest specified temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.