Plasma development process for photoresist
US4241165A · kind A · utility
54Cited by
4References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1978 |
| Grant date | Dec 23, 1980 |
| Priority date | — |
| Expiry date | Sep 5, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N15/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
After exposure to radiation photoresist may be developed by a dry process using a gas plasma, preferably an oxygen plasma. The process can be used for chemical milling, photolithography, printed circuit board and photomask manufacture and it is particularly advantageous in the manufacture of semiconductors. The plasma development process can be followed by plasma etch and strip processes without requiring removal of the work piece from the plasma reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.