Device for producing polycrystalline silicon
US4242307A · kind A · utility
18Cited by
8References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 13, 1979 |
| Grant date | Dec 30, 1980 |
| Priority date | — |
| Expiry date | Jun 13, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention relates to a method and device for producing polycrystalline silicon. The method consists in particular in purifying a bath of molten silicon which contains impurities by bubbling a mixture of chlorine and oxygen and in progressively crystallizing the purified silicon in a receptacle (22) which is moved vertically downwards in a vertical gradient of temperatures which increase towards the top. Application to manufacturing solar photocells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.