Low dark current photo-semiconductor device
US4242695A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1979 |
| Grant date | Dec 30, 1980 |
| Priority date | — |
| Expiry date | Jan 26, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2823
Abstract
A photo-semiconductor device includes an active region of semiconductor material in which carriers contributing to a photocurrent are generated by the irradiation of incident light. On one surface of the active region is formed a main junction towards which those carriers move. In the active region is buried an additional region to form at the interface between the additional and active regions an additional junction which attracts a substantial portion of thermally generated carriers. The remaining portion of the thermally generated carriers is partially recombined internally and partially attracted to the main junction. Thus, dark current is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.