Process for treating material in plasma environment
US4243865A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 1976 |
| Grant date | Jan 6, 1981 |
| Priority date | — |
| Expiry date | May 14, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of fabricating metal-semiconductor interfaces such as Schottky barriers and ohmic contacts. There is disclosed apparatus and method (or process) for chemically converting, etching, or passivating the surface of a material, such as the surface of a silicon wafer, in a gaseous plasma environment consisting of atomic, neutral nitrogen which causes the surface of the material to be resistant to otherwise subsequent nascent surface oxide buildup. This process is particularly useful in manufacture of Schottky diodes, transistors, and other electronic components or discrete and integrated devices requiring high quality metal-semiconductor junctions or interfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.