PNPN Semiconductor switches
US4244000A · kind A · utility
76Cited by
1References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 20, 1979 |
| Grant date | Jan 6, 1981 |
| Priority date | — |
| Expiry date | Nov 20, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/103
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit for preventing a dV/dt erroneous operation of a PNPN semiconductor switch is replaced by a capacitance on the surface of a semiconductor substrate, a high resistance gate electrode. In other words, such a circuit is formed on the surface of the substrate by a slight modification of the basic design without decreasing the chip area and without isolating component elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.