Semiconductor device having bump terminal electrodes
US4244002A · kind A · utility
30Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 1978 |
| Grant date | Jan 6, 1981 |
| Priority date | — |
| Expiry date | Oct 18, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure in which metallic connecting leads are bonded to bump terminal electrodes by thermal pressure bonding. A stress mitigation layer is advantageously provided in the semiconductor structure which prevents or reduces breaking of the semiconductor substrate or an insulating film when thermal pressure bonding is applied to the bump terminal electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.