Patent · US Expired

Method of improving the linearity of a double-face lateral photo detector for position determining purposes

US4244759A · kind A · utility

1Cited by
5References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 10, 1979
Grant dateJan 13, 1981
Priority date
Expiry dateApr 10, 1999

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/18

Abstract

A method of improving the linearity of a photo detector of the kind comprising a semiconductor wafer, two resistive layers, each one covering one side of said wafer, a p-n junction separating said two layers, and one pair of electrodes on each resistive layers, each pair of electrodes defining two opposite sides of a right-angled square, whereby two portions of the resistive layers are defined, within said square. Said portions within said square are delimited electrically from the rest of said layers and the p-n junction, for instance by etching, whereby the linearity within this square is increased, and thus the useful area of the detector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.