Method of improving the linearity of a double-face lateral photo detector for position determining purposes
US4244759A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1979 |
| Grant date | Jan 13, 1981 |
| Priority date | — |
| Expiry date | Apr 10, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A method of improving the linearity of a photo detector of the kind comprising a semiconductor wafer, two resistive layers, each one covering one side of said wafer, a p-n junction separating said two layers, and one pair of electrodes on each resistive layers, each pair of electrodes defining two opposite sides of a right-angled square, whereby two portions of the resistive layers are defined, within said square. Said portions within said square are delimited electrically from the rest of said layers and the p-n junction, for instance by etching, whereby the linearity within this square is increased, and thus the useful area of the detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.