Patent · US Expired

Double crucible crystal growing process

US4246064A · kind A · utility

23Cited by

6References

3Claims

0Family size

Assignee

Western Electric Company, Inc. · US

Inventors

Thomas J. Dewees · Levittown, US
John Stewart Fangman · Ewing Township, US
Wen-Bin Lin · Dresden, DE

Key dates

Filing date	Jul 2, 1979
Grant date	Jan 20, 1981
Priority date	—
Expiry date	Jul 2, 1999

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B15/12
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The disclosure is directed to a double crucible Czochralski crystal semiconductor growing apparatus (10). An inner crucible (14) floats in a melt within an outer crucible (13) and a single crystal semiconductor billet (23) is pulled from the melt (16) in the inner crucible. An elongated tubular member (26), having at least one small aperture (33) in the wall thereof, provides a channel between the outer and inner crucibles. The tubular member (26) permits flow of the melt in the outer crucible (14) to the inner crucible (13) while inhibiting the diffusion of dopant material from the inner to outer crucible while any gas in the member will pass through the aperture (33).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.