Method of making semiconductor device
US4247373A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 1979 |
| Grant date | Jan 27, 1981 |
| Priority date | — |
| Expiry date | Jun 12, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An epitaxial layer having a specified conductivity type formed on a semiinsulative or high resistivity semiconductor substrate or insulative substrate is anodized (anodically oxidized) by a predetermined D.C. current under an illumination of light of a predetermined intensity, thereby a depletion layer is formed beneath an oxide layer, which is formed by the anodizing, and the anodizing ceases in areas where the bottom face of the depletion layer reaches the semiinsulative or high resistivity semiconductor substrate or insulative substrate thus retaining a layer of highly uniform thickness layer of the epitaxial grown layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.