Semiconductor memory device
US4247863A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 1978 |
| Grant date | Jan 27, 1981 |
| Priority date | — |
| Expiry date | Aug 30, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a small-sized semiconductor memory device, wherein an N.sup.+ (P.sup.+)-type single region having an input function and an output function and an electrode for controlling the electrical potential in a P(N)-type Si substrate are provided on the top surface of the P(N)-type Si substrate. In order to store carriers, i.e., an information, in the bulk of the substrate, an N (P)-type buried layer is formed below the N.sup.+ (P.sup.+)-type input-output region, mentioned above. Information is quickly transferred from or into the buried layer by means of the punch-through effect, which is realized by spreading a depletion layer formed at a PN junction between the input-output region and the Si substrate. Since the carriers are stored in the bulk of the substrate, the size of the memory device is reduced and the surface property of the device does not exert a harmful influence on the carriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.