Supported diamond
US4248606A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1979 |
| Grant date | Feb 3, 1981 |
| Priority date | — |
| Expiry date | Aug 23, 1999 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2203/0685
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond; cubic boron nitride (CNB); and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50 Kbar at 1300.degree. C. to 85 Kbar at 1750.degree. C. They have applications in several fields, for example, wire drawing die blands, cutting tool blanks, and anvils for high pressure apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.