Chemical vapor deposition
US4250210A · kind A · utility
26Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1977 |
| Grant date | Feb 10, 1981 |
| Priority date | — |
| Expiry date | Dec 27, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for chemical vapor deposition of ruthenium on heat resistant substrates employing ruthenium 1, 3 dione compounds as volatile sources and causing the volatile material to impact on a heated receiving substrate in random fashion in a quiescent, low-pressure atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.