Bonded cathode and electrode structure with layered insulation, and method of manufacture
US4250428A · kind A · utility
30Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1979 |
| Grant date | Feb 10, 1981 |
| Priority date | — |
| Expiry date | May 9, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J19/42
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The variety of technologies that have been applied in the development of a onded grid cathode are described. These include chemical vapor deposition of tungsten, molybdenum, iridium, BM, and Si.sub.3 N.sub.4 on both sides of a sintered tungsten cathode disk. Zirconium and titanium getters have been used to eliminate nitrogen evolution problems. Films of Si.sub.3 N.sub.4 have been added to the insulation to prevent calcium and barium diffusion into the layer and maintain adequate resistivity and breakdown strength. Plasma etching was introduced as a method of removing Si.sub.3 N.sub.4 from the cathode pores.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.