Capacitor semiconductor storage circuit
US4250568A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 28, 1979 |
| Grant date | Feb 10, 1981 |
| Priority date | — |
| Expiry date | Nov 28, 1999 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/24
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage circuit has a plurality of storage elements which are provided with storage capacitors and which are grouped in rows and columns and integrated on a doped semiconductor body. The storage elements which form a row are provided with a common first drive line and the storage elements which form a column are provided with a second common drive line. The first drive lines are formed from strip-like electrically conductive layers which are separated by an insulating layer from the surface of the semiconductor body and the second drive lines consist of buried lines which extend within the semiconductor body and are oppositely doped with respect to the body. The insulating layer is designed to be thinner within the intersection zones of the drive lines so that in these zones insulating layer capacitors are formed which possess outer electrodes composed of parts of the first drive lines and which represent storage capacitors of the storage elements. The widths of the buried lines which represent the second drive lines are designed to be less than the dimensions, oriented transversely to these strips, of the outer electrodes, and between the buried lines which represe…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.