Method for forming shaped buried layers in semiconductor devices utilizing etching, epitaxial deposition and oxide formation
US4251300A · kind A · utility
6Cited by
10References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 14, 1979 |
| Grant date | Feb 17, 1981 |
| Priority date | — |
| Expiry date | May 14, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/965
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a shaped buried layer in a semiconductor structure includes the steps of removing a portion of semiconductor material from adjacent the surface of the semiconductor substrate to form an indentation, introducing a dopant into the surface of the indentation to form regions of impurity in the semiconductor substrate, forming a region of epitaxial material on the surface of the indentation, and forming regions of insulating material to surround the epitaxial material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.