Semiconductor magnetoresistive element having a differential effect
US4251795A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 1978 |
| Grant date | Feb 17, 1981 |
| Priority date | — |
| Expiry date | Nov 29, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/09
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor magnetoresistive element with at least one intermediate terminal comprises first and second electrodes formed at opposite ends of a magnetosensitive portion of the semiconductor magnetoresistive element, a third electrode interposed between the first and second electrodes, and a plurality of shorting bars disposed, with electrical isolation from each other, on at least one of respective sections of the magnetosensitive portion between the first and third electrodes and between the second and third electrodes, whereby the magnetic sensitivity characteristic of the magnetosensitive section between the first and third electrodes is rendered different from that of the magnetosensitive section between the second and third electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.