Solar cells composed of semiconductive materials

US4253881A · kind A · utility

Inventor

• Rudolf Hezel · Bocholt, DE

Key dates

• Filing date: Oct 10, 1979
• Grant date: Mar 3, 1981
• Expiry date: Oct 10, 1999

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A solar cell is composed of a semiconductive material having an active zone in which charge carriers are produced by photons which strike and penetrate into the solar cell. The cell is comprised of a semiconductive body having an electrically insulating laminate with metal contacts therein positioned on the semiconductor body in the active zone thereof. The insulating laminate is composed of a double layer of insulating material, with the layer in direct contact with the semiconductive surface being composed of SiO.sub.2 which is either natural or is produced at temperatures below 800.degree. C. and the layer superimposed above the SiO.sub.2 layer being composed of a different insulating material, such as plasma-produced Si.sub.3 N.sub.4. In certain embodiments of the invention, a whole-area pn-junction is provided parallel to the semiconductive surface. The solar cells of the invention exhibit a higher degree of efficiency due to a higher fixed interface charged density, and low surface recombination velocity, an increased UV sensitivity, improved surface protection and passivation and improved anti-reflection characteristics relative to prior art solar cell devices.