Electrophotographic element with bismuth oxide compound

US4254200A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Helmut Thomann · Schwalbach am Taunus, DE
• Christa Grabmaier · Starnberg, DE

Key dates

• Filing date: Mar 2, 1979
• Grant date: Mar 3, 1981
• Expiry date: Mar 2, 1999

Classification

• Technology area (CPC G): Physics
• CPC primary: G03G5/082
• WIPO field: Environmental technology
• WIPO sector: Chemistry

Abstract

X-rays or .gamma.-rays are detected by irradiating a beam of high energy radiation onto a crystalline bismuth oxide compound having the formula Bi.sub.10-14 X.sub.1 O.sub.n wherein X is at least one element selected from the group consisting of Al, Ga, Ge, Si and Ti and n is a numeral substantially equal to the stoichiometric amount of oxygen within the compound. The above bismuth oxide crystalline compound may be placed in a radiation dosimeter or be applied as a radiation-sensitive coating on a cylinder or plate of an apparatus for producing electrostatic copies (i.e., an in a xerographic process or the like). This is a division of application Ser. No. 837,197, filed Sept. 28, 1977.