Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface
US4255211A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 31, 1979 |
| Grant date | Mar 10, 1981 |
| Priority date | — |
| Expiry date | Dec 31, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A new high efficiency, multijunction photovoltaic solar cell for use with a concentration lens. This cell comprises an elemental single crystal substrate without an internal light sensitive junction, upon which are two or more successive homogenous layers of semiconductor materials, each layer containing within it a light sensitive p/n junction of a similar polarity, each layer having essentially the same lattice constant as the single crystal substrate, each layer having a shorting junction contact with the layer immediately above and below it, each successive layer adsorbing light energy at a shorter wavelength, and each layer being of sufficient thickness and appropriate composition to develop essentially the same current as the other layers. At the junction, between the successive layers of the multilayer cell, a thin pseudo transparent low bandgap semiconductor layer is provided at the shorting junction interface. The outer surfaces of the top layer and the substrate are provided with electrical contacts for distribution of the electric current. The top contact comprises a layer of a transparent conductive material with electrical connections and the whole structure is complet…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.