Storage type photosensor containing silicon and hydrogen
US4255686A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 1979 |
| Grant date | Mar 10, 1981 |
| Priority date | — |
| Expiry date | May 16, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/45
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.