GaAs Dual-gate FET frequency discriminator
US4255714A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 21, 1979 |
| Grant date | Mar 10, 1981 |
| Priority date | — |
| Expiry date | Feb 21, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03D3/26
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A microwave frequency discriminator comprising a dual-gate field effect transistor (FET) amplifier, bias circuits and a detector. The FET is biased to produce an output RF signal within a predetermined frequency bandwidth in response to an input RF signal. A limiter provides a substantially constant power level of the input RF signal to the FET. A detector biasing circuit is used to match electronically the output impedance of the FET to the input impedance of the detector. At such impedance conditions a dc output voltage of the detector varies substantially linearly throughout the frequency bandwidth as a function of the frequency of the input RF signal, approximating the characteristic of a frequency discriminator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.