Ion implantation system
US4258266A · kind A · utility
28Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1979 |
| Grant date | Mar 24, 1981 |
| Priority date | — |
| Expiry date | Jul 30, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The ion implantation system includes a separate vacuum housing 102 for the ion source and the target chamber 118. The ribbon beam ion source 10 provides a footprint 162 on the wafer wheel 126 of such shape as to permit short traverse of the wafer wheel 126 for full wafer scan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.