IIL With in and outdiffused emitter pocket
US4258379A · kind A · utility
28Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1979 |
| Grant date | Mar 24, 1981 |
| Priority date | — |
| Expiry date | Sep 24, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor IC device in which an N-type semiconductor layer is formed in a P-type semiconductor substrate; the N-type layer is divided by a P.sup.+ -type insulation region into plural island regions; and an IIL is formed in a first island region while an NPN transistor is formed in a second island region, wherein an N-type up-diffused layer is formed from the bottom of the first island region up while an N-type well region is formed from the surface of the first island region down, and N.sup.+ -type buried layers are formed near the bottoms of the first and the second island region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.