High switching speed P-N junction devices with recombination means centrally located in high resistivity layer
US4259683A · kind A · utility
22Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1978 |
| Grant date | Mar 31, 1981 |
| Priority date | — |
| Expiry date | Aug 21, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for operation at high switching speeds includes a region of reduced carrier lifetime situated in the portion of the device in which the peak amount of carrier recombination occurs during device turn-off. This region of reduced carrier lifetime causes fast carrier recombination during device turn-off such that device switching speed is correspondingly increased over that of comparable conventional devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.