Non-cryogenic infrared position and image sensor
US4260888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 1979 |
| Grant date | Apr 7, 1981 |
| Priority date | — |
| Expiry date | Nov 7, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N23/23
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An infrared image is formed on the surface of a light-sensitive silicon position sensor having four outer electrodes equally spaced around the periphery of the sensor and a central electrode. A bias voltage is applied between the outer electrodes and the central electrode. Changes in current at the central electrode is used to modulate the intensity of a CRO beam. A light beam is used to scan the surface of the sensor in a fixed pattern and the CRO beam is scanned in synchronism with the light beam. Thermal variations produced by the IR image modulate the CRO beam, producing a visual image on the CRO screen of the IR image formed on the sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.