Process for producing epitaxial layers
US4263087A · kind A · utility
18Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1980 |
| Grant date | Apr 21, 1981 |
| Priority date | — |
| Expiry date | Feb 11, 2000 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.