Nonvolatile static random access memory system
US4263664A · kind A · utility
33Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1979 |
| Grant date | Apr 21, 1981 |
| Priority date | — |
| Expiry date | Aug 31, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/213
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Nonvolatile, integrated metal-oxide semiconductor random access memory systems utilizing integrated floating gate circuit elements, and integrated means for the generation and control of high voltages in the provision of self-contained, nonvolatile electrically-alterable static RAM circuit systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.