Technique for making asymmetric thyristors
US4264383A · kind A · utility
2Cited by
7References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1979 |
| Grant date | Apr 28, 1981 |
| Priority date | — |
| Expiry date | Aug 23, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for doping a wafer of n-type seimiconductor material having two surfaces includes the steps of applying a boron solution to a first surface of the wafer and heating the wafer to drive the boron into the semiconductor wafer for forming a first p-type region. Both surfaces of the wafer are then exposed to a gallium vapor for forming a second p-type region on the second surface and deepening the extent of the first p-type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.