Method for producing silicon nitride molded bodies by means of pseudoisostatic hot pressing
US4264546A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 19, 1979 |
| Grant date | Apr 28, 1981 |
| Priority date | — |
| Expiry date | Mar 19, 1999 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B35/6455
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Method and apparatus for producing silicon nitride molded bodies by means of a pseudoisostatic hot pressing process. Silicon nitride is initially ground in a grinding vessel with grinding elements wherein the vessel is lined with the same material from which the grinding elements are made, e.g., hot pressed silicon nitride. Grinding is continued until a specific surface area greater than 15 m.sup.2 is obtained. The grinding takes place in the presence of a grinding liquid to prevent oxidation of the freshly ground silicon nitride. The silicon nitride suspension is then treated in a pressure vessel to remove the grinding liquid therefrom and form a blank. The blank is thereafter embedded within a pressure transfer medium, e.g., boron nitride, and inserted into the die of a hot pressing furnace to obtain the desired hot pressed silicon nitride. The pressure vessel used in this method comprises a chamber for the silicon nitride suspension, an outlet means connected to the bottom of the chamber to permit the vacuum removal of the grinding fluid from said suspension; and an inlet means connected to the chamber for admitting an inert gas, e.g., nitrogen, into the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.