Patent · US Expired

Method of manufacturing a voltage-nonlinear resistor

US4265844A · kind A · utility

9Cited by
17References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 7, 1980
Grant dateMay 5, 1981
Priority date
Expiry dateMay 7, 2000

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01C7/112
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method of manufacturing a voltage-nonlinear resistor which has a substantially symmetrical voltage-current characteristic and a large voltage-nonlinearity coefficient and which is thus well resistant to surge voltage. The method comprises: preparing a ZnO-based composition containing metal zinc, at least one metal oxide such as bismuth oxide and at least one spinel type crystalline compound such as spinel type crystalline chromium compound, shaping the ZnO-based composition to form a body, and sintering the body of composition in the air at 1,000.degree. C. or more.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.