High temperature refractory metal contact assembly and multiple layer interconnect structure
US4265935A · kind A · utility
14Cited by
8References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 22, 1979 |
| Grant date | May 5, 1981 |
| Priority date | — |
| Expiry date | Feb 22, 1999 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.